铜铟镓硒,CIGS
1)CIGS铜铟镓硒
1.Application of dipulse power supply with variable duty ratio to the preparation of predeposited layer ofCIGS thin films;可变占空比的双脉冲电源在铜铟镓硒预置层制备中的应用
2.And it gives introduction on the on-going commercializing project ofCIGS thin film photovoltaic(PV) technologies.阐述了铜铟镓硒薄膜太阳电池的研究现状、发展趋势;描述了铜铟镓硒薄膜太阳电池及其组件的商业化进程;介绍了正在实施和筹备的铜铟镓硒薄膜太阳电池技术的商业化项目。
英文短句/例句
1.Study on Fabrication of Cu(InGa)Se_2(CIGS) Thin-Film Solar Cells铜铟镓硒（CIGS）薄膜太阳能电池研究
2.Studies of Buffer Layers of Cu(in, Ga)Se_2-based Solar Cell;铜铟镓硒薄膜太阳能电池窗口层材料研究
3.Preparation and property of CuIn_(1-x)Ga_xSe_2thin film solar cells on flexible substrates铜铟镓硒柔性薄膜太阳电池的制备及性能表征
4.Effect of substrate temperature on CIGS thin films prepared by quarternary laminating selenization proces基底温度对四元叠层硒化法制备铜铟镓硒(CIGS)薄膜的影响
5.Preparation of Cadmium Sulphide Thin Film and Its Application on Copper Indium Gallium Diselenide Thin Film Solar Cells硫化镉薄膜的制备及其在铜铟镓硒薄膜太阳电池上的应用
6.Research Progress and Development Tendency of Cu(In,Ga)Se_2(CIGS) Thin Film Solar Cells铜铟镓硒薄膜太阳能电池的研究进展及发展前景
7.Study of In Segregation Phenomena during AgGa(1-x)In_xSe_2 Crystal Growth硒铟镓银单晶生长过程中In分凝现象研究
8.Study on Synthesis and Performance of New Generation CuInSe_2 Thin Film Solar Cell;新型薄膜铜铟硒（CuInSe_2）太阳电池的制备与性能研究
9.Studies of Cadmium Free Buffer Layers ZnS Thin Films of Cu(In, Ga)Se_2-based Solar Cell铜锢镓硒薄膜太阳电池无镉缓冲层ZnS薄膜研究
10.Characteristics of CIS Solar Energy Thin Films Prepared by PLD Sputtering and Post-selenizationPLD溅射后硒化法制备铜铟硒(CIS)太阳能薄膜的表征
11." Methods for chemical analysis of gallium--The spectro-chemical method for the determination of lead, copper,nickel, aluminum, indium and zinc contents"GB/T4375.12-1984镓化学分析方法化学光谱法测定铅、铜、镍、铝、铟和锌量
12.INFLUENCE OF Al CONCENTRATION IN PRECURSOR ON COMPOSITION AND STRUCTURE OF Cu(InAl)Se_2 ABSORBER前驱膜Al含量对铜铟铝硒薄膜成分和结构的影响
13.Interface study of CuInSe_2/ZnO and CuInSe_2/ZnO devices using ICP-assisted magnetron sputtering ZnO buffer layer感应耦合辅助磁控溅射氧化锌薄膜在铜铟硒薄膜太阳能电池中的界面(英文)
14.Spectrophometric Determination of Trace Rare Elements Ga,In and Ge微量稀散元素镓铟锗分光光度测定法
15.The Electronic Energy Levels of the Nanostructure InAs/GaAs Quantum Ring;纳米结构铟砷/镓砷量子环电子的能级
16.Progress on ionic liquids of gallium and indium稀散金属镓、铟离子液体的研究进展
17.Separation of Gold from Indium,Gallium,Cerium,Tungsten and Vanadium by Floatation金与铟、镓、铈、钨和钒的浮选分离
18.Research on the Structural and Electronic Properties of Ga_n、Ga_nN、In_n Clusters;镓（Ga_n）、氮化镓（Ga_nN）及铟（In_n）团簇的结构和电子性质研究
相关短句/例句
CIGS thin film铜铟镓硒薄膜
1.Application of sputtering-based laminating selenylation process to preparation ofCIGS thin films;以溅射为主的叠层硒化法制备大面积铜铟镓硒薄膜
3)AgGa1-xInxSe2硒铟镓银
4)CIGS solar cell铜铟镓硒太阳电池
5)CuInSe_2铜铟硒
1.Fundamental studies ofCuInSe_2 thin films based solar cells;铜铟硒薄膜太阳能电池的几个基础问题研究
parison of Photoelectrochemistry Oscillating Behaviour of Electrodeposited Semiconductor Thin FilmsCuInSe_2, AgInSe_2 and AuInSe_2;对用电沉积方法制备的铜铟硒、银铟硒和金铟硒半导体薄膜在阴极还原H2O2时产生的（光）电化学振荡现象进行了对比性的分析与研究。
6)Copper Indium Diselenide(CIS)铜铟硒(CIS)
延伸阅读
二硒化镓铜晶体分子式：CAS号：性质：周期表第I，III，VI族元素三元化合物半导体。正方晶系黄铜矿型结构，晶格常数0.5620nm，共价键结合，有一定离子键成分。为直接带隙半导体，室温禁带宽度1.70eV，一般为p型材料，空穴迁移率2×10-3m2/(V·s)。熔点1040℃。采用布里奇曼法、区域熔炼等方法制取。
