垂直外腔面发射激光器,vertical external-cavity surface emitting laser
1)vertical external-cavity surface emitting laser垂直外腔面发射激光器
1.The performance of optically pumped semiconductorvertical external-cavity surface emitting laser(OPS-VECSEL) is influenced by many parameters,so the theoretical analysis and simulation are very important.光抽运半导体垂直外腔面发射激光器(Optically Pumped Semiconductor Vertical External Cavity SurfaceEmission Laser)的输出特性受到诸多参数的影响,理论分析和模拟显得尤为重要。
2)optically pumped vertical-external-cavity surface-emitting semiconductor lasers光泵浦垂直外腔面发射半导体激光器
1.By using these mode-locking devices on novel thin-disk solid state lasers andoptically pumped vertical-external-cavity surface-emitting semiconductor lasers(OPS-VECSEL) to obtain high average output power ultrashort pulses are stated,and it is emphasized that the study of high average output power ultrashort pulses laser can be accel.综述了利用半导体可饱和吸收镜被动锁模薄片式固态激光器及光泵浦垂直外腔面发射半导体激光器,获得高平均输出功率超短脉冲的最新进展,并指出量子点半导体可饱和吸收镜的使用将加速超短高功率脉冲的发展。
3)optically pumped vertical external cavity surface emitting laser光泵浦半导体垂直外腔面发射激光器
4)optically pumped vertical-external cavity surface emitting semiconductor lasers光抽运垂直外腔面发射半导体激光器
英文短句/例句
1.Finite Element Analysis of Thermal Management in Optical Pumping Semiconductor Vertical-External Cavity Surface-Emitting Laser用有限元法讨论光抽运垂直外腔面发射半导体激光器的散热性能
2.Transverse Mode Control of Barried Structure Vertical Cavity Surface Emitting Lasers With Trapezoid Section梯形截面掩埋结构垂直腔面发射半导体激光器的横模控制
3.Numerical simulation of intracavity second harmonic generation for optically pumped semiconductor vertical-external-cavity surface-emitting lasers光抽运垂直扩展腔面发射激光器腔内倍频理论研究
4.Analysis on the Characteristics of Multiple-active-region Vertical-cavity Surface-emitting Laser多有源区垂直腔面发射半导体激光器的特性分析
5.A Study on Wet Oxidation Processing in Vertical-Cavity Surface-Emitting Semiconductor Lasers;垂直腔面发射半导体激光器中的湿法氧化工艺研究
6.The Research of Fabrication Procedures on Oxide-Confined Vertical-Cavity Surface-Emitting Lasers;氧化物限制型垂直腔面发射半导体激光器工艺的研究
7.light pumping semiconductor laser光抽运半导体激光器
8.vertical cavity surface emitting laser垂直空腔表面发射激光器
9.Analysis of Vertical-cavity Surface-emitting Lasers Small-sig nal Modulation Property垂直腔面发射激光器的动态特性分析
10.Design and Fabrication of 1310nm Vertical-Cavity Surface-Emitting Lasers;1310nm垂直腔面发射激光器设计与研制
11.Study on High Power 980nm Vertical Cavity Surface Emitting Lasers;高功率980nm垂直腔面发射激光器的研制
12.Polarization Properties of Vertical-Cavity Surface-Emitting Lasers;垂直腔面发射激光器偏振特性的研究
13.A Research on Vertical Cavity Surface Emitting Laser;对垂直腔面发射激光器(VCSEL)的应用探讨
14.Fabrication of New Structure Vertical-Cavity Surface-Emitting Laser新型结构垂直腔面发射激光器的研制
15.Submilliampare threshold 1.3μm vertical-cavity surface-emitting lasers亚毫安阈值的1.3μm垂直腔面发射激光器
16.Study on Nonlinear Dynamics of Vertical-Cavity Surface-Emitting Lasers with External Optical Feedback;垂直腔面发射激光器外光反馈非线性动态特性的研究
17.EFFECTS OF EXTERNAL OPTICAL FEEDBACK ON THE OSCILLATING CHARACTERISTICS OF 980nm VERTICAL-CAVITY SURFACE-EMITTING LASERS外部光反馈对980nm垂直腔面发射激光器振荡特性的影响
18.Researches on Thermal Effect and Photoelectricity Characteristic of VCSEL;垂直腔面发射激光器热效应与光电特性的研究
相关短句/例句
optically pumped vertical-external-cavity surface-emitting semiconductor lasers光泵浦垂直外腔面发射半导体激光器
1.By using these mode-locking devices on novel thin-disk solid state lasers andoptically pumped vertical-external-cavity surface-emitting semiconductor lasers(OPS-VECSEL) to obtain high average output power ultrashort pulses are stated,and it is emphasized that the study of high average output power ultrashort pulses laser can be accel.综述了利用半导体可饱和吸收镜被动锁模薄片式固态激光器及光泵浦垂直外腔面发射半导体激光器,获得高平均输出功率超短脉冲的最新进展,并指出量子点半导体可饱和吸收镜的使用将加速超短高功率脉冲的发展。
3)optically pumped vertical external cavity surface emitting laser光泵浦半导体垂直外腔面发射激光器
4)optically pumped vertical-external cavity surface emitting semiconductor lasers光抽运垂直外腔面发射半导体激光器
5)vertical cavity surface emitting laser垂直腔面发射激光器
1.Micro-cavity effects in the high modulation response of thevertical cavity surface emitting laser;高速调制响应垂直腔面发射激光器中的微腔效应
2.The Au-In-Au low temperature metallic bonding and its application in the structure fabrication of long wavelengthvertical cavity surface emitting laser(VCSEL)devices were investigated.研究了Au-In-Au低温金属键合技术,并把它应用到长波长垂直腔面发射激光器(VCSEL)器件结构的制作中。
3.Selective oxidation has evolved into a key technology in fabrication of high-performancevertical cavity surface emitting lasers(VCSELs).选择性氧化工艺已经成为制备高性能垂直腔面发射激光器(VCSEL)的关键技术,氧化后形成的氧化层提供了良好的电限制和折射率导引,但选择性氧化速率是呈线性规律还是抛物线规律仍存在很大的争议。
6)vertical-cavity surface-emitting laser垂直腔面发射激光器
1.Modulation response analysis of 1.3 μm quantum dotvertical-cavity surface-emitting lasers;1.3μm量子点垂直腔面发射激光器高频响应的优化设计
2.Design and analysis of 1.3 μm GaAs-based quantum dotvertical-cavity surface-emitting lasers;1.3μm GaAs基量子点垂直腔面发射激光器结构设计与分析
3.Researches on the Characteristics of Vertical-Cavity Surface-Emitting Lasers in High Speed Optical Fiber Communication Systems;高速光纤通信系统中垂直腔面发射激光器的特性研究
延伸阅读
大光腔激光器光学谐振腔较大的异质结激光器，简称 LOC激光器。为了增大光腔以获得较大的脉冲功率，70年代初H.克莱塞尔等在普通双异质结激光器的有源区和光限制层之间加入一个无源波导区。波导区与有源区一起组成谐振腔，有源区与波导区的厚度可以独立地控制。这样，有源区较窄可使它的阈电流较小、效率较高，而光腔大可使它有较小的发射角和较高的脉冲输出功率。图1a为最初研制的一种大光腔激光器各层结构的剖面图。图1b和图1c分别为各层材料的禁带宽度和折射率分布。图中1、2、3、4各层的厚度分别为d1、d2、d3、d4。图2a为分别限制的五层结构大光腔激光器的各层结构，图2b和2c分别为各层材料的禁带宽度和折射率分布。在大光腔激光器（图1）中，1层和4层的GaAlAs对光和载流子有很好的限制作用，同时N-GaAs对有源区发出的激光辐射的吸收系数低，这两个特点保证了大光腔激光器的阈值电流低和微分量子效率高。由于引入了波导层d2，谐振腔的出光面积由原来的d3×w 增加到(d2+d3)×w(w为器件宽度)。因而在输出功率较大情况下，仍不会超过激光器端面的破坏功率密度。腔面增大还使垂直于结方向的发射角θ减小。这些性能使大光腔激光器在光自动控制、长距离光纤通信、光测距等方面得到应用。大光腔结构也被应用在制造单模双异质结激光器上。采用光和载流子分别限制的办法，使控制模式和光束大小比较灵活，因而可获得单模高功率输出。
