变温光致发光,variable-temperature photoluminescence
1)variable-temperature photoluminescence变温光致发光
1.Thevariable-temperature photoluminescence spectra of strained InAsxP1-x/InP heterostructuer were experimentally determined in the temperature range 13~300 K.利用变温光致发光研究了InAs0。
2)temperature dependent PL measurement变温光致发光谱
1.fromtemperature dependent PL measurement spectra we determine the binding energy of the acceptors to be 131 meV at 81 K, suggests that it is a Sb_(Zn)-2V_(Zn) complex with activation energy of about160 meV.XRD和拉曼谱表明Sb~(3+)代替Zn~(2+)进入ZnO的格位,随着浓度的增加纳米粒子半径变小;通过变温光致发光谱,计算出在81 K时受主束缚能为131 meV,认为形成了Sb_(Zn)-2V_(Zn)复合体,理论计算其受主束缚能为160 meV。
3)room temperature photoluminescence室温光致发光
1.By fitting theroom temperature photoluminescence peak wavelength of the highly strained InGaAs/GaAs quantum well,we obtain the diffusion coefficients and the activation energy of In-Ga atoms interdiffusion (0.本文采用假设InGaAs/GaAs量子阱中的InGa原子扩散为误差函数扩散并解任意形状量子阱的薛定谔方程的方法,对不同退火温度下InGaAs/GaAs量子阱室温光致发光峰值波长拟合,得到了In原子在高应变InGaAs/GaAs量子阱中的扩散系数以及扩散激活能(0。
英文短句/例句
1.Room-temperature photoluminescence analysis of nano-β-FeSi_2/a-Si multilayer films纳米β-FeSi_2/a-Si多层膜室温光致发光分析
2.Photoluminescence properties of ZnO:Ag thin films grown by magnetron sputtering technique磁控溅射制备ZnO:Ag薄膜及其室温光致发光特性
3.Low-Temperature Photoluminescence Studies of Characteristics of Irradiated 6H-SiC;6H-碳化硅（SiC）辐照特性的低温光致发光研究
4.Room temperature photoluminescence properties of (Ba_(0.8)Sr_(0.2))TiO_3 thin films(Ba_(0.8)Sr_(0.2))TiO_3薄膜的室温发光行为研究
5.Experiment on soil evaporation of radish in sunlight greenhouse日光温室萝卜棵间土壤蒸发规律试验
6.Temperature Features of Solar Greenhouse Group and Development of Intelligent Folding Curtain System日光温室温度特征及温室群智能卷闭帘系统的研发
7.Absorption spectra, fluorescence emission spectra and excitation spectra of phycobilisomes at room temperature and liquid nitrogen temperature were studied.研究了螺旋藻藻胆体的吸收光谱,室温和液氮温度荧光发射光谱和激发光谱.
8.Effects of Low Temperature and Poor Light on Growth and Development Physiological and Biochemistrical Characters of (Capsicum Frutescens.L) in Solor Greenhouse;低温弱光对日光温室辣椒生长发育和生理生化特性的影响
9.Development Direction of Greenhouse Horticulture Industry in North China--Modern Solar Greenhouse Horticulture Industry;我国北方温室园艺产业的发展方向——现代日光温室园艺产业
10.Study of Photoluminescence and Electroluminescence from Silicon-based Lighting Materials;硅基发光材料的光致发光和电致发光研究
11.radiophotoluminescence detector辐射光致发光探测器
12.DC electroluminescent phosphor直流电致发光荧光粉
13.radiophotoluminescence dosimeter辐射光致发光剂量计
14.cathodoluminescent phosphor阴极射线致发光荧光粉
15.AC electroluminescent phosphor交流电致发光荧光粉
16.radioluminescent phosphor放射线致发光荧光粉
17.radiophotoluminescent dosimeter放射光致发光剂量计
18.Study on the Development and Landscape Plan and Design of Agricultural Sightseeing Greenhouse (A.S.G) in China;我国农业观光温室的发展和景观规划设计研究
相关短句/例句
temperature dependent PL measurement变温光致发光谱
1.fromtemperature dependent PL measurement spectra we determine the binding energy of the acceptors to be 131 meV at 81 K, suggests that it is a Sb_(Zn)-2V_(Zn) complex with activation energy of about160 meV.XRD和拉曼谱表明Sb~(3+)代替Zn~(2+)进入ZnO的格位,随着浓度的增加纳米粒子半径变小;通过变温光致发光谱,计算出在81 K时受主束缚能为131 meV,认为形成了Sb_(Zn)-2V_(Zn)复合体,理论计算其受主束缚能为160 meV。
3)room temperature photoluminescence室温光致发光
1.By fitting theroom temperature photoluminescence peak wavelength of the highly strained InGaAs/GaAs quantum well,we obtain the diffusion coefficients and the activation energy of In-Ga atoms interdiffusion (0.本文采用假设InGaAs/GaAs量子阱中的InGa原子扩散为误差函数扩散并解任意形状量子阱的薛定谔方程的方法,对不同退火温度下InGaAs/GaAs量子阱室温光致发光峰值波长拟合,得到了In原子在高应变InGaAs/GaAs量子阱中的扩散系数以及扩散激活能(0。
4)LTPL低温光致发光
1.In this article, low temperature photoluminescence (LTPL) measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃.本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。
2.In this thesis, irradiation-induced defects in 6H-SiC samples after neutron andelectron irradiation having different energies have been studied using lowtemperature photoluminescence (LTPL) and deep level transient spectroscopy (DLTS)techniques.本文用低温光致发光谱(PL)和深能级瞬态谱(DLTS)技术对中子和不同能量电子辐照后6H-SiC外延层的辐照诱生缺陷进行了研究，研究了不同辐照能量下辐照诱生缺陷的产生以及它们的退火行为，分析了它们在退火过程中的迁移、解体和重新组合等演变过程。
5)Low-temperature photoluminescence低温光致发光谱
6)photoluminescent thermometer光致发光温度计
延伸阅读
场致发光材料(见电致发光材料)场致发光材料(见电致发光材料)electroluminescent material见场致发光材料eleetrolumineseent material电致发光材料。
