低压化学气相沉积,low-pressure chemical vapor deposition
1)low-pressure chemical vapor deposition低压化学气相沉积
1.Synthesize single-wall carbon namotubes bylow-pressure chemical vapor deposition method;低压化学气相沉积法制备单壁碳纳米管
2.We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combininglow-pressure chemical vapor deposition and metal-induced lateral crystallization.研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构。
3.In this paper,we uselow-pressure chemical vapor deposition system to synthesize highly vertically aligned CNTs and non-aligned CNTs respectively,and apply them successfully in super-capacitors,field-emission cathode,as well as biological sensors.本论文利用低压化学气相沉积系统,分别以酞菁铁和乙炔为碳源制备出了高度定向与非定向的多壁碳纳米管,并将其成功应用于超级电容器和场发射阴极以及生物传感器中,在碳纳米管的应用方面作了初步的尝试。
英文短句/例句
1.Fabrication of Silicon Inverse Opal Three-Dimensional Photonic Crystal Using Lpcvd/Template Techniques;低压化学气相沉积/模板技术制备硅反蛋白石三维光子晶体
2.Synthesis of Carbon Nanotubes by Low Pressure Chemical Vapor Deposition and Their Applications碳纳米管的低压化学气相沉积法制备及其应用研究
3.Fabrication of Germanium Inverse Opal Three-dimensional Photonic Crystal by LPCVD低压化学气相沉积技术制备锗反蛋白石三维光子晶体
4.The Study of the Deposition of SiO_2 Films with RF Cold Plasma at Atmospheric-pressure;常压射频低温等离子体增强化学气相沉积二氧化硅薄膜的研究
5.The Effect of Bias on Low Pressure Plasma-Enhanced Chemical Vapour Deposition of TiO_2 Film and its Structure and Performance偏压对低气压等离子体增强化学气相沉积TiO_2薄膜的结构和性能的影响
6.thermally activated chemical vapour deposition热活化化学气相沉积
7.plasma activated chemical vapour deposition等离子体化学气相沉积
8.epitaxial CVD growth外延化学气相沉积生长
9.A Study on Atmospheric Pressure Chemical Vapor Deposition of TiN Film and Its Kinetics;TiN薄膜常压化学气相沉积及动力学研究
10.Low Temperature Synthesis of Nano Onion-like Fullerenes by CVD化学气相沉积法低温合成纳米洋葱状富勒烯
11.A Ti_5Si_3 THIN FILM AND ITS COATING GLASS DEPOSITED BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION METHOD常压化学气相沉积法制备Ti_5Si_3薄膜及其镀膜玻璃
12.Atmospheric-pressure Plasma Chemical Vapor Deposition for Polycrystalline Silicon Preparation from SiCl_4 and OES Diagnosis由SiCl_4制备多晶硅的大气压等离子体化学气相沉积及发射光谱诊断
13.Preparation of TiO_2 Films by Atmospheric Pressure Chemical Vapor Deposition & Study of Doping Properties;常压化学气相沉积法二氧化钛薄膜的制备与掺杂性能研究
14.The Study of Diamond Films and Its Composite Films Deposited by Bias Voltage HFCVD;偏压热丝化学气相沉积金刚石膜及其复合膜的研究
15.Study of Porous Nanocrystalline TiO_2 Thin Film Deposited by Atmospheric Pressure Plasma-enhanced Chemical Vapor Deposition;常压等离子化学气相沉积纳米晶TiO_2多孔薄膜的研究
16.Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
17.Effect of Oxygen Partial Pressure on the Morphology of ZnO Nanostructure Prepared by Chemical Vapor Deposition氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响
18.Study of Porous Nanocrystalline TiO_2 Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapour Deposition常压等离子体增强化学气相沉积纳米晶TiO_2多孔薄膜的研究
相关短句/例句
LPCVD低压化学气相沉积
1.Titanium dioxide then films were prepared byLPCVD.用低压化学气相沉积法制备TiO2薄膜。
2.The chemical composition, surface micrograph and refractive index of silicon nitride film (SiNx) grown on silicon wafer from SiH4-NH3-N2 system via low pressure chemical vapor deposition (LPCVD) were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transformed infrared spectroscopy (FTIR), atomic force microscope (AFM) and spectroscopic ellipsometer.通过傅立叶红外光谱(FTIR)和X光电子能谱(XPS)研究了SiH4-NH3-N2体系在不同气体原料比情况下,低压化学气相沉积(LPCVD)SiNx薄膜的化学组成,利用原子力显微镜观察了SiNx薄膜的微观形貌,借助椭圆偏振仪研究了薄膜的折射率。
3.By using electron spin resonance(ESR),the intrinsic defects in high-quality semi-insulating 4H-SiC prepared by low pressure chemistry vapor deposition(LPCVD)are investigated.利用电子自旋共振波谱(ESR)仪,分析由低压化学气相沉积(LPCVD)法制备的高纯半绝缘4H-SiC材料本征缺陷。
3)low pressure chemical vapor deposition低压化学气相沉积
1.Boron doped carbon(BCx)thin film was prepared at 1 100 ℃ on carbon fiber substrate bylow pressure chemical vapor deposition(LPCVD)from BCl3 and C3H6 as boron and carbon sources respectively.以 BCl3和 C3H6分别作为低压化学气相沉积制备掺硼碳材料的硼源和碳源,采用热壁化学气相沉积炉,于 1 100 ℃在碳纤维基底上制备了掺硼碳薄膜。
2.Ge nanowires are synthesized bylow pressure chemical vapor deposition (LPCVD) combined with porous alumina template.采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 。
4)Low Pressure Chemical Vapor Deposition(LPCVD)低压化学气相沉积法
5)LP-MOCVD低压金属有机化学气相沉积
1.InAs Self-assembled Quantum Dots Grown on (001)InP byLP-MOCVD;报道利用低压金属有机化学气相沉积(LP-MOCVD)技术在(001)InP衬底上生长InAs自组装量子点的结果,用光致发光技术观察到较强的室温光荧光谱,其峰值波长约为1603um,分布在1300um~1700um范围内,半高峰宽为80me
6)LPMOCVD低压金属有机化学气相沉积
1.High-quality GaN film was successfully deposited on(0001)-oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition(LPMOCVD) process.采用低压金属有机化学气相沉积(LPMOCVD)法,成功地在(0001)晶向的蓝宝石(A l2O3)衬底上制备了高质量的GaN薄膜。
延伸阅读
低压化学气相沉积分子式:CAS号:性质:一种在低压下利用化学反应进行外延生长方法。其突出的优点是外延生长室为低压,此时载气流速增大,反应物质在表面的扩散系数增大,可减少反应物之间的寄生反应,以及外延生长对反应室的记忆效应,增大纵向均匀性。其压力范围一般在1.0Pa到4×104pa之间。低压外延有时是必须采用的手段,当化学反应对压力敏感,原材料蒸气压很低时,常压下不易进行反应,在低压下变得容易进行。